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During this project BPTI RF is going to commercialise the R&D results of an innovative low-noise amplifier (LNA) developed by the Baltic Institute of Advanced Technology. LNA is based on European Gallium Arsenide (GaAs) technology using pseudomorphic high-electron scattering transistors (pHEMT). GaAs-based semiconductor devices are becoming one of the market leaders in individual segments due to the advantages of GaAs material. The aim of the project is to commercialise the LNA prototype and provide the final version to the market.

The project is funded in accordance with the European Union Funds Investment Operational Program 2014–2020; priority “Promotion of Research, Experimental Development and Innovation”; measure No. 01.2.2-MITA-K-702 “Promotion of commercialisation and internationalisation of R&D results” 

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